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Applied Plasma Physics and Fusion Energy Seminar Series

Fall 2002

Tuesday, 3:30-4:30 PM in 479 EBU-II

October 8

Alex Bonne
Applied Materials


The technology of ion implantation for integrated circuit manufacture has its origins in the particle accelerators of high-energy physics and material science research. This seminar will address several challenges to state-of-the-art commercial beamline ion implantation for semiconductor manufacture, including: ion beam purity; the ion beam current vs. energy trade-off; obtaining uniform dose across a 200 or 300 mm wafer surface; dopant profile requirements and analysis techniques. Possible future directions of ion implant will also be discussed. [an error occurred while processing this directive]